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Comparison of post-growth carrier lifetime improvement methods for 4H-SiC epilayers
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
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2012 (English)In: Silicon Carbide And Related Materials 2011, Pts 1 And 2, Trans Tech Publications Inc., 2012, Vol. 717-720, 285-288 p.Conference paper (Refereed)
Abstract [en]

We compare two methods for post-growth improvement of bulk carrier lifetime in 4H-SiC: dry oxidations and implantations with either 12C or 14N, followed by high temperature anneals in Ar atmosphere. Application of these techniques to samples cut from the same wafer/epilayer yields 2- to 11-fold lifetime increases, with the implantation/annealing technique shown to give greater maximum lifetimes. The maximum lifetimes reached are ∼5 μs after 12C implantation at 600 °C and annealing in Ar for 180 minutes at 1500 °C. At higher annealing temperatures the lifetimes decreases, a result which differs from reports in the literature.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 285-288 p.
, Materials Science Forum, ISSN 0255-5476 ; 717-720
Keyword [en]
Annealing, Carrier lifetime, Implantation, Oxidation, Photon counting
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-100116DOI: 10.4028/ 000309431000066ScopusID: 2-s2.0-84861381864ISBN: 978-303785419-8OAI: diva2:543362
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH;11 September 2011 through 16 September 2011

QC 20120807

Available from: 2012-08-07 Created: 2012-08-03 Last updated: 2013-09-12Bibliographically approved

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Hallén, Anders
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ReferencesLink to record
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