Comparison of post-growth carrier lifetime improvement methods for 4H-SiC epilayers
2012 (English)In: Silicon Carbide And Related Materials 2011, Pts 1 And 2, Trans Tech Publications Inc., 2012, Vol. 717-720, 285-288 p.Conference paper (Refereed)
We compare two methods for post-growth improvement of bulk carrier lifetime in 4H-SiC: dry oxidations and implantations with either 12C or 14N, followed by high temperature anneals in Ar atmosphere. Application of these techniques to samples cut from the same wafer/epilayer yields 2- to 11-fold lifetime increases, with the implantation/annealing technique shown to give greater maximum lifetimes. The maximum lifetimes reached are ∼5 μs after 12C implantation at 600 °C and annealing in Ar for 180 minutes at 1500 °C. At higher annealing temperatures the lifetimes decreases, a result which differs from reports in the literature.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 285-288 p.
, Materials Science Forum, ISSN 0255-5476 ; 717-720
Annealing, Carrier lifetime, Implantation, Oxidation, Photon counting
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-100116DOI: 10.4028/www.scientific.net/MSF.717-720.285ISI: 000309431000066ScopusID: 2-s2.0-84861381864ISBN: 978-303785419-8OAI: oai:DiVA.org:kth-100116DiVA: diva2:543362
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH;11 September 2011 through 16 September 2011
QC 201208072012-08-072012-08-032013-09-12Bibliographically approved