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High dose Al + implanted and microwave annealed 4H-SiC
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-8760-1137
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2012 (English)In: Silicon Carbide and Related Materials 2011, Trans Tech Publications Inc., 2012, 817-820 p.Conference paper, Published paper (Refereed)
Abstract [en]

A post implantation microwave annealing technique has been used for the electrical activation of Al + implanted ions in semi-insulating 4H-SiC. The annealing temperatures have been 2000-2100°C. The implanted Al concentration has been varied from 5 × 10 19 to 8 × 10 20 cm -3. A minimum resistivity of 2 × 10 -2 Ω·cm and about 70% electrical activation of the implanted Al has been measured at room temperature for an implanted Al concentration of 8 × 10 20 cm -3 and a microwave annealing at 2100°C for 30s.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. 817-820 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 717-720
Keyword [en]
Electrical activation, Ion implantation, Microwave annealing, P-type doping
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-100355DOI: 10.4028/www.scientific.net/MSF.717-720.817ISI: 000309431000194Scopus ID: 2-s2.0-84861389486ISBN: 978-303785419-8 (print)OAI: oai:DiVA.org:kth-100355DiVA: diva2:543368
Conference
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH;11 September 2011 through 16 September 2011
Note
QC 20120807Available from: 2012-08-07 Created: 2012-08-07Bibliographically approved

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Hallén, Anders

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