A theoretical and experimental comparison of 4H- and 6H-SiC MSM UV photodetectors
2012 (English)In: Silicon Carbide and Related Materials 2011, Trans Tech Publications Inc., 2012, Vol. 717-720, 1207-1210 p.Conference paper (Refereed)
This paper reports on fabrication and modeling of 4H- and 6H-SiC metal-semiconductor-metal (MSM) photodetectors (PDs). MSM PDs have been fabricated on 4H-SiC and 6H-SiC epitaxial layers, and their performance analyzed by MEDICI simulation and measurements. The simulations were also used to optimize the sensitivity by varying the width and spacing of the interdigitated electrodes. The fabricated PDs with 2 ÎŒm wide metal electrodes and 3 ÎŒm spacing between the electrodes exhibited, under UV illumination, a peak current to dark current ratio of 10 5 and 10 4 in 4H-SiC and 6H-SiC, respectively. The measured spectral responsivity of 6H-SiC PDs was higher compared to that of 4H-SiC PDs, with a cutoff at 407 nm compared to 384 nm in 4H-SiC PDs. Also the peak responsivity occurred at a shorter wavelength in 6H material. A high rejection ratio between the photocurrent and dark current was found in both cases. These experimental results were in agreement with simulation.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 1207-1210 p.
, Materials Science Forum, ISSN 0255-5476 ; 717-720
MSM (metal-semiconductor-metal), PDs (photodetectors), UV photodetector SiC
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-100121DOI: 10.4028/www.scientific.net/MSF.717-720.1207ISI: 000309431000289ScopusID: 2-s2.0-84861401605ISBN: 978-303785419-8OAI: oai:DiVA.org:kth-100121DiVA: diva2:543420
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH; 11 September 2011 through 16 September 2011
QC 201208082012-08-082012-08-032016-02-26Bibliographically approved