Photoluminescence and Raman spectroscopy characterization of boron-and nitrogen-doped 6H silicon carbide
2012 (English)In: Silicon Carbide and Related Materials 2011, Trans Tech Publications Inc., 2012, Vol. 717-720, 233-236 p.Conference paper (Refereed)
Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 10 18 cm -3 is favorable to observe the luminescence and addition of nitrogen leads to an increased luminescence. A dopant concentration difference larger than 4Ã—10 18 cm -3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC can serve as a good wavelength converter in white LEDs applications.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 233-236 p.
, Materials Science Forum, ISSN 0255-5476 ; 717-720
6H-SiC, Donor-acceptor-pair emission, Photoluminescence, Raman spectroscopy, Sublimation epitaxy
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-100122DOI: 10.4028/www.scientific.net/MSF.717-720.233ISI: 000309431000054ScopusID: 2-s2.0-84861397715ISBN: 978-303785419-8OAI: oai:DiVA.org:kth-100122DiVA: diva2:543422
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH; 11 September 2011 through 16 September 2011
QC 201208082012-08-082012-08-032012-08-08Bibliographically approved