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Photoluminescence and Raman spectroscopy characterization of boron-and nitrogen-doped 6H silicon carbide
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2012 (English)In: Silicon Carbide and Related Materials 2011, Trans Tech Publications Inc., 2012, Vol. 717-720, 233-236 p.Conference paper, Published paper (Refereed)
Abstract [en]

Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 10 18 cm -3 is favorable to observe the luminescence and addition of nitrogen leads to an increased luminescence. A dopant concentration difference larger than 4×10 18 cm -3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC can serve as a good wavelength converter in white LEDs applications.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 233-236 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 717-720
Keyword [en]
6H-SiC, Donor-acceptor-pair emission, Photoluminescence, Raman spectroscopy, Sublimation epitaxy
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-100122DOI: 10.4028/www.scientific.net/MSF.717-720.233ISI: 000309431000054Scopus ID: 2-s2.0-84861397715ISBN: 978-303785419-8 (print)OAI: oai:DiVA.org:kth-100122DiVA: diva2:543422
Conference
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH; 11 September 2011 through 16 September 2011
Note
QC 20120808Available from: 2012-08-08 Created: 2012-08-03 Last updated: 2012-08-08Bibliographically approved

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Linnarsson, Margareta

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CiteExportLink to record
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Citation style
  • apa
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  • modern-language-association-8th-edition
  • vancouver
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  • de-DE
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  • fi-FI
  • nn-NO
  • nn-NB
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  • Other locale
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Output format
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  • asciidoc
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