Mn implantation for new applications of 4H-SiC
2012 (English)In: Silicon Carbide and Related Materials 2011 / [ed] Devaty, RP; Dudley, M; Chow, TP; Neudeck, PG, Trans Tech Publications Inc., 2012, Vol. 717-720, 221-224 p.Conference paper (Refereed)
Structural disorder and lattice recovery of high dose, manganese implanted, semiinsulating, 4H-SiC have been studied by secondary ion mass spectrometry, Rutherford backscattering in channeling directions, visible-to-near infrared optical spectroscopy as well as with transmission electron microscopy. After heat treatment at 1400 and 1600 Â°C, a substantial rearrangement of manganese is observed in the implanted region. However, the crystal has not been fully recovered. More disorder remains in the  compared to the  channel direction. Stacking faults, voids and 3C inclusions are observed in the implanted region. A Mn containing phase has most likely formed.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 221-224 p.
, Materials Science Forum, ISSN 0255-5476 ; 717-720
4H-SiC, Ion implantation, Manganese, RBS, SIMS, TEM
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-100124DOI: 10.4028/www.scientific.net/MSF.717-720.221ISI: 000309431000051ScopusID: 2-s2.0-84861367240ISBN: 978-303785419-8OAI: oai:DiVA.org:kth-100124DiVA: diva2:543423
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH;11 September 2011 through 16 September 2011
QC 201208082012-08-082012-08-032012-12-06Bibliographically approved