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Mn implantation for new applications of 4H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-0292-224X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8774-9302
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2012 (English)In: Silicon Carbide and Related Materials 2011 / [ed] Devaty, RP; Dudley, M; Chow, TP; Neudeck, PG, Trans Tech Publications Inc., 2012, Vol. 717-720, 221-224 p.Conference paper, Published paper (Refereed)
Abstract [en]

Structural disorder and lattice recovery of high dose, manganese implanted, semiinsulating, 4H-SiC have been studied by secondary ion mass spectrometry, Rutherford backscattering in channeling directions, visible-to-near infrared optical spectroscopy as well as with transmission electron microscopy. After heat treatment at 1400 and 1600 °C, a substantial rearrangement of manganese is observed in the implanted region. However, the crystal has not been fully recovered. More disorder remains in the [1123] compared to the [0001] channel direction. Stacking faults, voids and 3C inclusions are observed in the implanted region. A Mn containing phase has most likely formed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 221-224 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 717-720
Keyword [en]
4H-SiC, Ion implantation, Manganese, RBS, SIMS, TEM
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-100124DOI: 10.4028/www.scientific.net/MSF.717-720.221ISI: 000309431000051Scopus ID: 2-s2.0-84861367240ISBN: 978-303785419-8 (print)OAI: oai:DiVA.org:kth-100124DiVA: diva2:543423
Conference
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH;11 September 2011 through 16 September 2011
Note

QC 20120808

Available from: 2012-08-08 Created: 2012-08-03 Last updated: 2012-12-06Bibliographically approved

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Linnarsson, Margareta K.Hallén, AndersKhartsev, Sergiy I.

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