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Local anodic oxidation of phosphorus-implanted 4H-SiC by atomic force microscopy
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
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2012 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 717-720, 905-908 p.Article in journal (Refereed) Published
Abstract [en]

In this work, local oxidation behavior in phosphorus ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (LO) has been performed on the implanted samples, with and without activation anneal, using varying applied bias (15/20/25 V). It has been clearly shown that the post-implantation annealing process at 1650 °C has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 905-908 p.
Keyword [en]
AFM, Ion-implantation, Local anodic oxidation, Silicon carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-100115DOI: 10.4028/www.scientific.net/MSF.717-720.905ISI: 000309431000216Scopus ID: 2-s2.0-84861357328ISBN: 978-303785419-8 (print)OAI: oai:DiVA.org:kth-100115DiVA: diva2:543426
Conference
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH;11 September 2011 through 16 September 2011
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Note

QC 20120808

Available from: 2012-08-08 Created: 2012-08-03 Last updated: 2017-12-07Bibliographically approved

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Hallén, AndersZetterling, Carl-Mikael

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