Local anodic oxidation of phosphorus-implanted 4H-SiC by atomic force microscopy
2012 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 717-720, 905-908 p.Article in journal (Refereed) Published
In this work, local oxidation behavior in phosphorus ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (LO) has been performed on the implanted samples, with and without activation anneal, using varying applied bias (15/20/25 V). It has been clearly shown that the post-implantation annealing process at 1650 Â°C has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 905-908 p.
AFM, Ion-implantation, Local anodic oxidation, Silicon carbide
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-100115DOI: 10.4028/www.scientific.net/MSF.717-720.905ISI: 000309431000216ScopusID: 2-s2.0-84861357328ISBN: 978-303785419-8OAI: oai:DiVA.org:kth-100115DiVA: diva2:543426
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH;11 September 2011 through 16 September 2011
QC 201208082012-08-082012-08-032016-04-25Bibliographically approved