Bipolar integrated OR-NOR gate in 4H-SiC
2012 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 717-720, 1257-1260 p.Article in journal (Refereed) Published
An integrated bipolar OR-NOR gate based on emitter coupled logic (ECL) is demonstrated in 4H-SiC. Operated from 27 up to 300 Â°C on -15 V supply voltage the logic gate exhibits stable noise margins (NMs) of about 1 V in the entire temperature range, and high and low output voltage levels that move towards positive voltages when the temperature increases: from -3 up to -2.7 V and from -5.4 up to -5.1 V respectively. In the same temperature range transistor current gain (Î²) goes from 46 down to 21.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 1257-1260 p.
Emitter coupled logic (ECL), High temperature ICs, SiC ICs, Silicon carbide (SiC)
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-100118DOI: 10.4028/www.scientific.net/MSF.717-720.1257ISI: 000309431000301ScopusID: 2-s2.0-84861374312ISBN: 978-303785419-8OAI: oai:DiVA.org:kth-100118DiVA: diva2:543428
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH;11 September 2011 through 16 September 2011
QC 201208082012-08-082012-08-032016-04-26Bibliographically approved