Metal work-function and doping-concentration dependent barrier height of Ni-contacts to 4H-SiC with metal-embedded nano-particles
2012 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 717-720, 857-860 p.Article in journal (Refereed) Published
We investigated the effect of the metal work-function and doping concentration on the barrier height of Ni-contacts with embedded nano-particles (NPs) on 4H-SiC surfaces. Both n-type epitaxial layers with N-D=1x10(16) cm(-3), and layers doped by phosphorus implantation to a doping concentration of similar to 1x10(19) cm(-3) are used. The barrier height is reduced with increasing doping concentration and the silver (Ag) nano-particles (R similar to 18.5 nm) further enhance the local electric field of the electrical contacts to 4H-SiC in comparison to gold (Au) nano-particles (R similar to 20.2 nm). In the case of ion-implanted samples, the barrier height of the fabricated SiC diode structures with embedded Ag-NPs was significantly reduced by similar to 0.09 eV and similar to 0.25 eV compared to the samples with Au-NPs and the sample without NPs, respectively.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 857-860 p.
Barrier height, Metal contact, Nano-particles, Tung's model
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-100120DOI: 10.4028/www.scientific.net/MSF.717-720.857ISI: 000309431000204ScopusID: 2-s2.0-84861410123ISBN: 978-303785419-8OAI: oai:DiVA.org:kth-100120DiVA: diva2:543439
14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011; Cleveland, OH;11 September 2011 through 16 September 2011
QC 201506292012-08-082012-08-032015-06-29Bibliographically approved