Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Binary anodic oxides for memristor-type nonvolatile memory
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2012 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 9, no 7, 1699-1701 p.Article in journal (Refereed) Published
Abstract [en]

The temperature dependence of the optical properties of InGaAs/GaAs double quantum wells (QWs) grown by molecular beam epitaxy (MBE) on (100) and (311)A GaAs substrates has been studied by photoluminescence (PL). It is found that for an excitation of 50 mW, the PL quenching for (100) and (311)A QWs occurs at 220 K and 300 K, respectively. This suggests that the high index plane (311)A has superior structural properties and less non-radiative defect centers than the conventional (100) plane. The better optical quality of the QWs grown on (311)A is also confirmed by the narrowing of the full width at half-maximum (FWHM) of the PL emission: 10 nm for (311)A and 20 nm for (100). From these findings it is expected that optical devices grown on (311)A GaAs planes should have better performances than those grown on conventional (100) orientation. We have also carried out a systematic study to investigate the effect of post-growth thermal annealing on the optical quality of the QWs. We observed a substantial improvement of the PL efficiency with annealing temperatures in the range 500-700 °C for all samples. However, this PL enhancement is accompanied by a blueshift. These energy shifts can be explained by interdiffusion or intermixing of In and Ga atoms at the interfaces between the QWs and the barriers. A noticeable narrowing of the PL linewidth with higher annealing temperatures could be explained by a homogenisation of the quantum well interfaces.

Place, publisher, year, edition, pages
2012. Vol. 9, no 7, 1699-1701 p.
Keyword [en]
Niobium oxide, Resistive switching, RRAM, Tantalum oxide, Thin oxide films, Zirconium oxide
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-100494DOI: 10.1002/pssc.201100625ISI: 000306479300051Scopus ID: 2-s2.0-84864010915OAI: oai:DiVA.org:kth-100494DiVA: diva2:543825
Conference
16th International Semiconducting and Insulating Materials Conference (SIMC-XVI) Location: Royal Inst Technol (KTH), Stockholm, Sweden Date: JUN 19-23, 2011
Note

QC 20120810

Available from: 2012-08-10 Created: 2012-08-09 Last updated: 2017-12-07Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Grishin, Alexander M.
By organisation
Integrated Devices and Circuits
In the same journal
Physica Status Solidi. C, Current topics in solid state physics
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 52 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf