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Irradiation induced nanotrack and property modification in Zn 3P 2
KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
2012 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 9, no 7, 1636-1639 p.Article in journal (Refereed) Published
Abstract [en]

Zn 3P 2 epilayers were grown on InP (100) substrates by liquid phase epitaxy (LPE) using In solvent. Zinc composition in the epilayers was varied by changing the zinc mole fraction in the growth melt and was confirmed by energy dispersive X-ray analysis (EDAX). Stoichiometric Zn 3P 2 epilayers were subjected to 100 MeV Ni ion irradiation with various ion fluences of 1 × 10 10 to 1 × 10 13 ions/cm 2 at 77 K. From the high resolution X-ray diffraction (HRXRD) of 100 MeV Ni ion irradiated epilayers, the decrease in the peak intensities and increase in the FWHM values were observed. AFM analysis revealed the formation of nanotracks in the irradiated Zn 3P 2 epilayers. Hall measurements showed the decrease in carrier mobility with the increase of ion fluence. The absorption band edge of Zn 3P 2 gradually decreased from 1.49 eV to 1.42 eV upon increasing the ion fluence.

Place, publisher, year, edition, pages
2012. Vol. 9, no 7, 1636-1639 p.
Keyword [en]
Atomic force microscopy, Ion irradiation, Liquid phase epitaxy, Nanotrack, Semiconducting materials
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-100493DOI: 10.1002/pssc.201100714ISI: 000306479300032ScopusID: 2-s2.0-84863995589OAI: diva2:543826
16th International Semiconducting and Insulating Materials Conference (SIMC-XVI) Location: Royal Inst Technol (KTH), Stockholm, Sweden, Date: JUN 19-23, 2011

QC 20120810

Available from: 2012-08-10 Created: 2012-08-09 Last updated: 2012-08-30Bibliographically approved

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Nagarajan, Mony
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