Selective area heteroepitaxy through nanoimprint lithography for large area InP on Si
2012 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 9, no 7, 1610-1613 p.Article in journal (Refereed) Published
The use of nanoimprint lithography, a low cost and time saving alternative to E-beam lithography, for growing heteroepitaxial indium phosphide layer on silicon is demonstrated. Two types of patterns on 500 nm and 200 nm thick silicon dioxide mask either on InP substrate or InP seed layer on silicon were generated by UV nanoimprint lithography: (i) circular openings of diameter 150 nm and 200 nm and (ii) line openings of width ranging from 200 nm to 500 nm. Selective area growth and epitaxial lateral overgrowth of InP were conducted on these patterns in a low pressure hydride vapour phase epitaxy reactor. The epitaxial layers obtained were characterized by atomic force microscopy, scanning electron microscopy and micro photoluminescence. The growth from the circular openings on InP substrate and InP (seed) on Si substrate is extremely selective with similar growth morphology. The final shape has an octahedral flat top pyramid type geometry. These can be used as templates for growing InP nanostructures on silicon. The grown InP layers from the line openings on InP substrates are âˆŒ 2.5 ÎŒm thick with root mean square surface roughness as low as 2 nm. Completely coalesced layer of InP over an area of 1.5 mm x 1.5 mm was obtained.The room temperature photoluminescence intensity from InP layers on InP substrate is 55% of that of homoepitaxial InP layer. The decrease in PL intensity with respect to that of the homoepitaxial layer is probably due to defects associated with stacking faults caused by surface roughness of the mask surface. Thus in this study, we have demonstrated that growth of heteroepitaxial InP both homogeneously and selectively on the large area of silicon can be achieved. This opens up the feasibility of growing InP on large area silicon for several photonic applications.
Place, publisher, year, edition, pages
2012. Vol. 9, no 7, 1610-1613 p.
Epitaxial lateral overgrowth, Heteroepitaxy, Indium phosphide on silicon, Nanoimprint lithography
Other Materials Engineering
IdentifiersURN: urn:nbn:se:kth:diva-100480DOI: 10.1002/pssc.201100678ISI: 000306479300024ScopusID: 2-s2.0-84863995899OAI: oai:DiVA.org:kth-100480DiVA: diva2:543853
16th International Semiconducting and Insulating Materials Conference (SIMC-XVI) Location: Royal Inst Technol (KTH), Stockholm, Sweden Date: JUN 19-23, 2011
QC 201208172012-08-102012-08-092014-05-23Bibliographically approved