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Future high temperature applications for SiC integrated circuits
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
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2012 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 9, no 7, 1647-1650 p.Article in journal (Refereed) Published
Abstract [en]

The main advantage of SiC is its high critical field for breakdown. This leads to much lower on-resistance for high voltage devices compared to silicon, but at a higher price that has to be offset by system gains. However, it is not straightforward to exploit this advantage, which is clear from the many different device types that are presently being commercialized. There are other advantages of SiC yet to be fully investigated: the possibility of high temperature operating electronics and radiation hard devices. If integrated circuits in SiC are also available, the system advantage is larger. Here temperature ranges higher than that of SOI should be aimed at, and some of these new application areas will be described. An overview of IC research will be ended with a description of our selected technology operated at 300 °C.

Place, publisher, year, edition, pages
Wiley-VCH Verlag , 2012. Vol. 9, no 7, 1647-1650 p.
Keyword [en]
High temperature, Integrated circuit, Radiation hardness, Silicon carbide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-100452DOI: 10.1002/pssc.201100689ISI: 000306479300035Scopus ID: 2-s2.0-84863998212OAI: oai:DiVA.org:kth-100452DiVA: diva2:543857
Conference
16th International Semiconducting and Insulating Materials Conference (SIMC-XVI) Location: Royal Inst Technol (KTH), Stockholm, Sweden Date: JUN 19-23, 2011
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StandUp
Note

QC 20120810

Available from: 2012-08-10 Created: 2012-08-08 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-MikaelMalm, B. Gunnar

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