Near- and far-field optical characterization of InGaN photonic crystal light emitting diodes
2012 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 9, no 7, 1664-1666 p.Article in journal (Refereed) Published
Light extraction from InGaN photonic crystal (PhC) light emitting diodes (LEDs) has been studied by scanning near-field optical microscopy and time-resolved photoluminescence. The observed patterns of the near-field intensity are complex and do not correspond to the physical structure of the photonic crystal. Comparison with conventional LEDs without the PhC showed that PhC not only improves the light extraction, but also makes the LED emission more homogeneous.
Place, publisher, year, edition, pages
2012. Vol. 9, no 7, 1664-1666 p.
photonic crystal, LED, SNOM, InGaN
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-100801DOI: 10.1002/pssc.201100571ISI: 000306479300040ScopusID: 2-s2.0-84863994477OAI: oai:DiVA.org:kth-100801DiVA: diva2:544991
16th International Semiconducting and Insulating Materials Conference (SIMC-XVI), JUN 19-23, 2011, Stockholm, Sweden
QC 201208172012-08-172012-08-172012-11-01Bibliographically approved