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Fabrication of highly ordered nanopillar arrays and defined etching of ALD-grown all-around platinum films
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2012 (English)In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 22, no 8, 085013- p.Article in journal (Refereed) Published
Abstract [en]

Highly ordered arrays of silicon nanopillars are etched by means of induced-coupled-plasma reactive-ion etching (RIE). The sulfur hexafluoride/oxygen (SF6/O-2)-based cryogenic process allows etching of nanopillars with an aspect ratio higher than 20:1 and diameters down to 30 nm. Diameters can be further reduced by a well-controllable oxidation process in O-2-ambient and a subsequent etching in hydrofluoric acid. This approach effectively removes surface contaminations induced by former RIE, as shown by x-ray photoelectron spectroscopy. Atomic layer deposition (ALD) is used to establish an all-around Al2O3/Pt stack onto the vertically aligned nanorods. Two approaches are successfully applied to remove the resistant Pt coating from the nanopillar tips.

Place, publisher, year, edition, pages
2012. Vol. 22, no 8, 085013- p.
Keyword [en]
Silicon, Transistors, Mosfet
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-101121DOI: 10.1088/0960-1317/22/8/085013ISI: 000306649000013ScopusID: 2-s2.0-84864467977OAI: diva2:547029

QC 20120827

Available from: 2012-08-27 Created: 2012-08-23 Last updated: 2012-08-27Bibliographically approved

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Henkel, Christoph
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Integrated Devices and Circuits
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