Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures
2012 (English)In: Optics Express, ISSN 1094-4087, Vol. 20, no 19, 21264-21271 p.Article in journal (Refereed) Published
InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 mu m and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 mu m, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 mu m) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.
Place, publisher, year, edition, pages
2012. Vol. 20, no 19, 21264-21271 p.
Molecular-Beam Epitaxy, Infrared Photodetectors, Inas, Detectors, Growth
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-103127DOI: 10.1364/OE.20.021264ISI: 000308865600068ScopusID: 2-s2.0-84866264107OAI: oai:DiVA.org:kth-103127DiVA: diva2:559299
QC 201210082012-10-082012-10-042013-05-21Bibliographically approved