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Mask roughness impact on extreme UV and 193 nm immersion lithography
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-0568-0984
2012 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 98, 138-141 p.Article in journal (Refereed) Published
Abstract [en]

The contribution of mask absorber line edge roughness on printed resist lines is studied for extreme UV and 193 nm immersion lithography. Programmed roughness modules were designed for roughness transfer function evaluation on 88 nm pitch line space patterns. The tested modules were designed applying variations of roughness amplitude and spatial frequency. Power spectral density analysis was performed on top-down SEM images. The effect of frequency roughness filtering by the lithographic optical system was studied with different illumination settings. It was found that, except for the degradation of the aerial image due to the filtering effect, less performing illuminations show an increased deterioration of the aerial image quality and thus contribute further to line edge roughness. A comparison with previous work was completed on different mask architectures and photoresist platforms. Resist performance can attenuate the roughness transfer from mask but at the cost of worse chemical gradient at the edges of the exposed regions.

Place, publisher, year, edition, pages
2012. Vol. 98, 138-141 p.
Keyword [en]
EUV, Frequency analysis, LER, LWR, Programmed roughness
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-103529DOI: 10.1016/j.mee.2012.07.068ISI: 000309497200026Scopus ID: 2-s2.0-84865608370OAI: oai:DiVA.org:kth-103529DiVA: diva2:561072
Note

QC 20121017

Available from: 2012-10-17 Created: 2012-10-15 Last updated: 2017-12-07Bibliographically approved

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Garidis, Konstantinos

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