Top-Down Fabrication of High Quality III–V Nanostructures by Monolayer Controlled Sculpting and Simultaneous Passivation
2013 (English)In: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028, Vol. 23, no 13, 1620-1627 p.Article in journal (Refereed) Published
In the fabrication of IIIV semiconductor nanostructures for electronic and optoelectronic devices, techniques that are capable of removing material with monolayer precision are as important as material growth to achieve best device performances. A robust chemical treatment is demonstrated using sulfur (S)-oleylamine (OA) solution, which etches layer by layer in an inverse epitaxial fashion and simultaneously passivates the surface. The application of this process to push the limits of top-down nanofabrication is demonstrated by the realization of InP-based high optical quality nanowire arrays, with aspect ratios more than 50, and nanostructures with new topologies. The findings are relevant for other IIIV semiconductors and have potential applications in IIIV device technologies.
Place, publisher, year, edition, pages
2013. Vol. 23, no 13, 1620-1627 p.
semiconductor nanostructures, monolayer etching, surface passivation, nanowires, top-down fabrication, membranes
Nano Technology Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-104528DOI: 10.1002/adfm.201202201ISI: 000317019100003ScopusID: 2-s2.0-84875827561OAI: oai:DiVA.org:kth-104528DiVA: diva2:564985
FunderSwedish Research Council, 349-2007-8664EU, FP7, Seventh Framework Programme, 248855
QC 201305072012-11-052012-11-052013-05-07Bibliographically approved