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Structure of ordered oxide on InAs(100) surface
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
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2012 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 606, no 23-24, 1837-1841 p.Article in journal (Refereed) Published
Abstract [en]

It was recently found that oxygen induces ordered reconstructions on several III-V surfaces. The most oxygen-rich reconstruction shows (3x1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable In - O - In trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3 x 1) reconstruction than within the competing (2 x 1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap.

Place, publisher, year, edition, pages
2012. Vol. 606, no 23-24, 1837-1841 p.
Keyword [en]
Ab initio calculations, Indium arsenide, Oxide, Surface reconstruction
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-104357DOI: 10.1016/j.susc.2012.07.028ISI: 000309318100014ScopusID: 2-s2.0-84866355020OAI: diva2:566665
Swedish Research Council
Available from: 2012-11-09 Created: 2012-11-01 Last updated: 2012-11-09Bibliographically approved

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Zhang, HualeiVitos, Levente
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