Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films
2012 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 24, no 43, 435803- p.Article in journal (Refereed) Published
The optical properties of p-type InP epitaxial films with different doping concentrations are investigated by infrared absorption measurements accompanied by reflection and transmission spectra taken from 25 to 300 K. A complete dielectric function (DF) model, including intervalence band (IVB) transitions, free-carrier and lattice absorption, is used to determine the optical constants with improved accuracy in the spectral range from 2 to 35 mu m. The IVB transitions by free holes among the split-off, light-hole, and heavy-hole bands are studied using the DF model under the parabolic-band approximation. A good understanding of IVB transitions and the absorption coefficient is useful for designing high operating temperature and high detectivity infrared detectors and other optoelectronic devices. In addition, refractive index values reported here are useful for optoelectronic device designing, such as implementing p-InP waveguides in semiconductor quantum cascade lasers. The temperature dependence of hole effective mass and plasma frequency is also reported.
Place, publisher, year, edition, pages
2012. Vol. 24, no 43, 435803- p.
Intervalence Band Absorption, Inp Laser-Diode, Effective-Mass, Semiconductors, Gap, Energy, Index, Parameters, Gaas
IdentifiersURN: urn:nbn:se:kth:diva-104690DOI: 10.1088/0953-8984/24/43/435803ISI: 000309965200019ScopusID: 2-s2.0-84867267013OAI: oai:DiVA.org:kth-104690DiVA: diva2:566794
QC 201211092012-11-092012-11-092012-11-09Bibliographically approved