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A Simple High-Performance Low-Loss Current-Source Driver for SiC Bipolar Transistors
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
Warsaw Institute of Technology.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0002-1755-1365
2012 (English)In: 7th International Power Electronics and Motion Control Conference (IPEMC), 2012, IEEE conference proceedings, 2012, 222-228 p.Conference paper, Published paper (Refereed)
Abstract [en]

The paper proposes a novel topology of a simple base drive unit for silicon carbide bipolar junction transistors (BJTs) based on the current-source principle. Energy stored in a small, air-cored inductor is employed to generate a current peak forcing the BJT to turn-on (10–20ns) very rapidly. The driver enables very high switching performance and very low switching losses of the driven BJT. Both the current source and the unit delivering the steady-state current to the base are supplied from the same low-voltage source in order to limit power consumption. Operation principles as well as selected design issues are discussed in the paper and illustrated by experiments. The 1200V/6A SiC BJT driven by the proposed circuit shows a very fast switching speed.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2012. 222-228 p.
Keyword [en]
Silicon carbide, base drive unit, bipolar transistor, current source
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-104816DOI: 10.1109/IPEMC.2012.6258834Scopus ID: 2-s2.0-84866785066ISBN: 978-1-4577-2085-7 (print)OAI: oai:DiVA.org:kth-104816DiVA: diva2:567481
Conference
ECCE Asia 2012 - 7th International Power Electronics and Motion Control Conference, Harbin, China, 2-5 June 2012
Note

Qc 20121116

Available from: 2012-11-16 Created: 2012-11-13 Last updated: 2016-11-24Bibliographically approved

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Nee, Hans-Peter

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