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Optical absorptions in AlxGa1-xAs/GaAs quantum well for solar energy application
KTH, School of Engineering Sciences (SCI), Applied Physics.
KTH, School of Engineering Sciences (SCI), Applied Physics, Cell Physics.ORCID iD: 0000-0002-2442-1809
2012 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 112, no 5, 054314- p.Article in journal (Refereed) Published
Abstract [en]

We study the optical transitions among localized and extended states in quantum solar cells based on AlxGa1-xAs/GaAs quantum well (QW). The absorption coefficients of localized-to-localized, ground localized-to-extended, and extended-to-localized transitions are enhanced obviously as the size of the QW decreases. When the wave functions of incident electrons and holes spread along different sides of the structure, the absorption coefficient of extended-to-extended states becomes non-zero value when the QW is inserted. This process has a main contribution to the photocurrents. In addition, our studies also show these optical transitions have different sensitivities to the Fermi levels. Therefore, optical absorptions in AlxGa1-xAs/GaAs solar cells can be optimized by the sizes of QW and Fermi levels.

Place, publisher, year, edition, pages
2012. Vol. 112, no 5, 054314- p.
Keyword [en]
Efficiency, Cells, Layer
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-104707DOI: 10.1063/1.4749416ISI: 000309072200127Scopus ID: 2-s2.0-84866366073OAI: oai:DiVA.org:kth-104707DiVA: diva2:567724
Note

QC 20121114

Available from: 2012-11-14 Created: 2012-11-09 Last updated: 2017-12-07Bibliographically approved

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Fu, Ying

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