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Alternative graphene devices: Beyond field effect transistors
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-1234-6060
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-4637-8001
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2012 (English)In: Device Research Conference (DRC), 2012 70th Annual, IEEE , 2012, 24a-24b p.Conference paper, Published paper (Refereed)
Abstract [en]

The future manufacturability of graphene devices depends on the availability of large-scale graphene fabrication methods. While chemical vapor deposition and epitaxy from silicon carbide both promise scalability, they are not (yet) fully compatible with silicon technology. Direct growth of graphene on insulating substrates would be a major step, but is still at a very early stage [1]. This has implications on potential entry points of graphene as an add-on to mainstream silicon technology, which will be discussed in the talk.

Place, publisher, year, edition, pages
IEEE , 2012. 24a-24b p.
Series
Device Research Conference - Conference Digest, DRC, ISSN 1548-3770
Keyword [en]
Direct growth, Entry point, Fabrication method, Fully compatible, Graphene devices, Insulating substrates, Manufacturability, Silicon Technologies, Chemical vapor deposition, Field effect transistors, Silicon carbide, Graphene
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-105472DOI: 10.1109/DRC.2012.6257028Scopus ID: 2-s2.0-84866915157ISBN: 978-146731161-8 (print)OAI: oai:DiVA.org:kth-105472DiVA: diva2:571054
Conference
70th Device Research Conference, DRC 2012, 18 June 2012 through 20 June 2012, University Park, PA
Funder
StandUp
Note

QC 20121121

Available from: 2012-11-21 Created: 2012-11-21 Last updated: 2013-04-16Bibliographically approved

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Vaziri, Sam

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