Loss comparison of different sub-module implementations for modular multilevel converters in HVDC applications
2012 (English)In: EPE Journal: European Power Electronics and Drives Journal, ISSN 0939-8368, Vol. 22, no 3, 32-38 p.Article in journal (Refereed) Published
This paper presents a loss calculation and comparison between different submodule topologies and semiconductor choices for a Modular Multilevel Converter in a 1.1 GW, ± 320 kV HVDC application. Accordingly, a detailed analysis of the losses for three different M2C implementations using both insulated gate bipolar transistors (IGBTs) and integrated gatecommutated thyristors (IGCTs) is presented. The losses for six different submodule realizations are shown in a loss breakdown in Fig. 7. It shows that the very low conduction loss of the IGCT is to some degree offset by higher switching losses and extra turn-on snubber losses but that the IGCT implementations provide significantly lower losses than their IGBT counterparts. The loss break-down also shows that clamp-double submodules and full-bridge submodules suffer from approximately 25% and 50% additional losses respectively as compared to the half-bridge case. An experimental verification of the loss calculations has been performed using a down-scaled M2C prototype. The results show a very good agreement between calculations and measured losses.
Place, publisher, year, edition, pages
European Power Electronics and Drives Association, 2012. Vol. 22, no 3, 32-38 p.
modular multilevel converter, high voltage direct current, IGCT
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-105828ISI: 000314624000005ScopusID: 2-s2.0-84873194963OAI: oai:DiVA.org:kth-105828DiVA: diva2:572383
QC 201302182012-11-272012-11-272016-02-26Bibliographically approved