Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Loss comparison of different sub-module implementations for modular multilevel converters in HVDC applications
KTH, School of Electrical Engineering (EES).ORCID iD: 0000-0003-3455-9067
KTH, School of Electrical Engineering (EES).ORCID iD: 0000-0002-8565-4753
KTH, School of Electrical Engineering (EES).ORCID iD: 0000-0002-1755-1365
2012 (English)In: EPE Journal: European Power Electronics and Drives Journal, ISSN 0939-8368, Vol. 22, no 3, 32-38 p.Article in journal (Refereed) Published
Abstract [en]

This paper presents a loss calculation and comparison between different submodule topologies and semiconductor choices for a Modular Multilevel Converter in a 1.1 GW, ± 320 kV HVDC application. Accordingly, a detailed analysis of the losses for three different M2C implementations using both insulated gate bipolar transistors (IGBTs) and integrated gatecommutated thyristors (IGCTs) is presented. The losses for six different submodule realizations are shown in a loss breakdown in Fig. 7. It shows that the very low conduction loss of the IGCT is to some degree offset by higher switching losses and extra turn-on snubber losses but that the IGCT implementations provide significantly lower losses than their IGBT counterparts. The loss break-down also shows that clamp-double submodules and full-bridge submodules suffer from approximately 25% and 50% additional losses respectively as compared to the half-bridge case. An experimental verification of the loss calculations has been performed using a down-scaled M2C prototype. The results show a very good agreement between calculations and measured losses.

Place, publisher, year, edition, pages
European Power Electronics and Drives Association, 2012. Vol. 22, no 3, 32-38 p.
Keyword [en]
modular multilevel converter, high voltage direct current, IGCT
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
URN: urn:nbn:se:kth:diva-105828ISI: 000314624000005Scopus ID: 2-s2.0-84873194963OAI: oai:DiVA.org:kth-105828DiVA: diva2:572383
Funder
StandUp
Note

QC 20130218

Available from: 2012-11-27 Created: 2012-11-27 Last updated: 2017-12-07Bibliographically approved
In thesis
1. Cascaded Converters with Gate-Commutated Thyristors: Experimental Verification and Auxiliary Power Supply
Open this publication in new window or tab >>Cascaded Converters with Gate-Commutated Thyristors: Experimental Verification and Auxiliary Power Supply
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis describes an effort to investigate the use of gate-commutated thyristors(GCTs) in cascaded converters. Cascaded converters, such as modularmultilevel converters (M2Cs) and cascaded H-bridge converters (CHBs), haveproved to be especially suitable in high-voltage, high-power applications. Allof the most important advantages of cascaded converters, e.g. redundancy andscalability, can be attributed to the modular structure. Of special interestregarding the choice of semiconductor power devices is the reduced requirementon the switching frequency of individual devices. This brings a shift in thetrade-off between switching and conduction losses, where the latter has moreimportance in cascaded converters than in other topologies. This shift favorsthyristor-type devices like the GCT, which can achieve very low conductionlosses.To quantify the potential gain in the application of GCTs in cascadedconverters the losses have been calculated and a comparison between differentsubmodule implementations has been presented. The comparison has shownthat GCTs can provide 20-30% lower losses compared to insulated-gate bipolartransistors (IGBTs) in a typical HVDC application. In order to verify the lowlosses of GCT-based submodules, extensive work has been put into buildingand testing full-scale submodules employing GCTs. A resonant test circuithas been developed in which the submodules can be tested in steady-stateoperation which allows calorimetric measurements of the losses. The calorimetricmeasurements have verified that the loss calculation was reasonableand not lacking any important components.A drawback of GCTs is that the gate-drive units require much more powerthan gate-drive units for comparable IGBTs. In order to employ GCTs inhigh-voltage cascaded converters some means of supplying this power in thesubmodule must be provided. One option is to take this power from thesubmodule dc-link, but this requires a dc-dc converter capable of high inputvoltages. A tapped-inductor buck converter with a novel, autonomous highsidevalve was developed for this application. The autonomous operation of thehigh-side valve allows reliable operation without galvanic isolation components.A converter with a high-side valve with series-connected MOSFETs capable ofan input voltage of 3 kV has been presented.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2015. 47 p.
Series
TRITA-EE, ISSN 1653-5146 ; 2015:021
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-166666 (URN)978-91-7595-581-0 (ISBN)
Public defence
2015-06-08, Kollegiesalen, Brinellvägen 8, KTH, Stockholm, 10:15 (English)
Opponent
Supervisors
Note

QC 20150521

Available from: 2015-05-21 Created: 2015-05-13 Last updated: 2015-05-21Bibliographically approved

Open Access in DiVA

No full text

Scopus

Authority records BETA

Modéer, TomasNorrga, StaffanNee, Hans-Peter

Search in DiVA

By author/editor
Modéer, TomasNorrga, StaffanNee, Hans-Peter
By organisation
School of Electrical Engineering (EES)
In the same journal
EPE Journal: European Power Electronics and Drives Journal
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 427 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf