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Effect of be doping on the properties of GaMnAs ferromagnetic semiconductors
Department of Physics, Korea University.
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2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 93, no 10 3, 8307-8309 p.Article in journal (Refereed) Published
Abstract [en]

The effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors was analyzed. The samples were characterized using SQUID and magnetotransport measurements. The observed increase in the critical temperature in Ga 1-xMn xAs for the low range of x can be explained by the increase of free carrier concentrations in the system arising from Be doping.

Place, publisher, year, edition, pages
2003. Vol. 93, no 10 3, 8307-8309 p.
Keyword [en]
Beryllium, Carrier concentration, Magnetic field effects, Molecular beam epitaxy, Semiconducting gallium compounds, Semiconductor doping, SQUIDs, Thermodynamics, Curie temperature, Ferromagnetic materials
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-105603DOI: 10.1063/1.1556272OAI: diva2:572409

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NR 20140805Available from: 2012-11-27 Created: 2012-11-22 Last updated: 2012-11-30Bibliographically approved

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