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Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices
Department of Physics, Korea University.
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2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 11, 7402-7404 p.Article in journal (Refereed) Published
Abstract [en]

The effects of free carriers in the nonmagnetic spacer layer on the magnetic properties of GaMnAs/GaAs ferromagnetic semiconductor superlattices (SL) were investigated. In the SL system, one of the SL structures was doped with Be in the GaAs spacer layers, and the GaAs layer of the other SL were undoped in order to investigate the effects of carriers. The remanent magnetization of the two SL were calculated in order to analyze the robustness of the SL systems. The hardness of the magnetization in the SL with Be-doped GaAs layer was found to be related to interlayer coupling which was introduced by doping of the nonmagnetic layers.

Place, publisher, year, edition, pages
2004. Vol. 95, no 11, 7402-7404 p.
Keyword [en]
Free carriers, Interlayer exchange coupling (IEC), Nonmagnetic spacer layers, Remanent magnetization, Annealing, Carrier concentration, Coercive force, Ferromagnetic materials, Light emitting diodes, Magnetic field effects, Magnetization, Molecular beam epitaxy, Remanence, Semiconducting gallium arsenide, Semiconductor doping, SQUIDs, Semiconductor superlattices
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-105602DOI: 10.1063/1.1676025ISI: 000221657900294OAI: oai:DiVA.org:kth-105602DiVA: diva2:572411
Note

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Available from: 2012-11-27 Created: 2012-11-22 Last updated: 2017-12-07Bibliographically approved

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