Heterogeneous 3D integration of 17 mu m pitch Si/SiGe quantum well bolometer arrays for infrared imaging systems
2013 (English)In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 23, no 4, 045017- p.Article in journal (Refereed) Published
This paper reports on the realization of 17 mu m x 17 mu m pitch bolometer arrays for uncooled infrared imagers. Microbolometer arrays have been available in primarily defense applications since the mid-1980s and are typically based on deposited thin films on top of CMOS wafers that are surface-machined into sensor pixels. This paper instead focuses on the heterogeneous integration of monocrystalline Si/SiGe quantum-well-based thermistor material in a CMOS-compliant process using adhesive wafer bonding. The high-quality monocrystalline thermistor material opens up for potentially lower noise compared to commercially available uncooled microbolometer arrays together with a competitive temperature coefficient of resistance (TCR). Characterized bolometers had a TCR of -2.9% K-1 in vacuum, measured thermal conductances around 5 x 10(-8) WK-1 and thermal time constants between 4.9 and 8.5 ms, depending on the design. Complications in the fabrication of stress-free bolometer legs and low-noise contacts are discussed and analyzed.
Place, publisher, year, edition, pages
2013. Vol. 23, no 4, 045017- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-106201DOI: 10.1088/0960-1317/23/4/045017ISI: 000316299900018ScopusID: 2-s2.0-84878081474OAI: oai:DiVA.org:kth-106201DiVA: diva2:572967
QC 20130422. Updated from submitted to published.2012-11-292012-11-292013-10-03Bibliographically approved