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Effect of low temperature annealing on the magnetic properties of Ga 1-xMn xAs/GaAs superlattices
Department of Physics, Korea University.
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2005 (English)In: Journal of Superconductivity and Novel Magnetism, ISSN 1557-1939, Vol. 18, no 1, 93-96 p.Article in journal (Refereed) Published
Abstract [en]

We have studied the effect of low-temperature (LT) annealing on the properties of Ga 1-xMn xAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (H C) three times larger than the undoped SL, and showed a much more robust remanent magnetization (M r). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of M r in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures. © 2005 Springer Science+Business Media, Inc.

Place, publisher, year, edition, pages
2005. Vol. 18, no 1, 93-96 p.
Keyword [en]
Ferromagnetic Semiconductor, GaMnAs, Magnetization, Superlattices, Ferromagnetic semiconductors, Inter-diffusion, Low temperature (LT) annealing, Annealing, Ferromagnetic materials, Gallium compounds, Low temperature effects, Magnetic properties, Reflection high energy electron diffraction, Sensitivity analysis, SQUIDs, Semiconducting gallium arsenide
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-105599DOI: 10.1007/s10948-005-2157-5ISI: 000228131800018OAI: diva2:572994

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Available from: 2012-11-29 Created: 2012-11-22 Last updated: 2013-05-13Bibliographically approved

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Condensed Matter Physics

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