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Doping effect on the properties of III-V ferromagnetic semiconductor GaMnAs epilayers and their superlattices
Department of Physics, Korea University.
Department of Physics, Korea University.
2005 (English)In: Journal of the Korean Physical Society, ISSN 0374-4884, Vol. 47, no 3, 444-447 p.Article in journal (Refereed) Published
Abstract [en]

We present a systematic study on the properties of the ferromagnetic (FM) III-V-based semiconductor GaMnAs, including extrinsically doped GaMnAs: Be and its heterostructures in the form of superlattices. In an attempt to further improve the Curie temperature T c of GaMnAs, we have undertaken a systematic program of extrinsic p-doping of this material. In GaMnAs with low x (x = 0.03), T c is, indeed, seen to increase monotonically with increasing Be doping. We also studied the effect of p-doping of non-magnetic spacer layers on the magnetic properties of GaMnAs/GaAs superlattices (SLs). While Be-doped SLs exhibited relatively robust remanent magnetization and a larger coercivity over a broad temperature range, undoped SLs showed a fast decrease in the remanent magnetization with temperature, and a rather small coercivity. We propose that the observed hardness of the magnetization in SLs with Be-doped GaAs layers is related to the interlayer coupling introduced by the doping of the non-magnetic layers.

Place, publisher, year, edition, pages
2005. Vol. 47, no 3, 444-447 p.
Keyword [en]
Doping, GaMnAs, Superlattice
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-105600ISI: 000231915200009OAI: diva2:573368

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Available from: 2012-11-30 Created: 2012-11-22 Last updated: 2013-05-13Bibliographically approved

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