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Transport properties of ferromagnetic GaMnAs interfaced with paramagnetic ZnMnSe in the form of bilayer structures
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2006 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 99, no 8Article in journal (Refereed) Published
Abstract [en]

We have investigated the magnetotransport properties of a series of magnetic semiconductor bilayer structures consisting of 300-nm-thick Ga1-x Mnx As and 150-nm-thick Zn1-y Mny Se layers. The temperature scan of resistance and an Arrot plot obtained from Hall resistance data showed that the Curie temperature (TC) of the GaMnAsZnMnSe bilayer is higher than that of the bare GaMnAs. Furthermore, magnetoresistance measurement reveals significant enhancement of the magnetic hardness of the GaMnAs system in bilayer form even though the magnetic easy axis of the GaMnAs was not altered by the neighboring ZnMnSe layer. This observation indicates that the magnetotransport properties of GaMnAs can be changed by an adjacent magnetic layer due to the interactions between the two magnetic layers. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 99, no 8
Keyword [en]
Curie temperature (TC), Magnetic layers, Magnetotransport properties, Data acquisition, Hall effect, Magnetic semiconductors, Magnetoresistance, Paramagnetic materials, Thermal effects, Semiconducting gallium compounds
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-105598DOI: 10.1063/1.2169391ISI: 000237404200217OAI: oai:DiVA.org:kth-105598DiVA: diva2:573517
Note

References: Wolf, S.A., Awschalom, D.D., Buhrman, R.A., Daughton, J.M., Von Molar, S., Roukes, M.L., Chtchelkamova, A.Y., Treger, D.M., (2001) Science, 294, p. 1488; Ohno, Y., Young, D.K., Beschoten, B., Matsukura, F., Ohno, H., Awschalom, D.D., (1999) Nature (London), 402, p. 790; Loss, D., Divincenzo, D.P., (1998) Phys. Rev. A, 57, p. 120; Oiwa, A., Mitsumori, Y., Moriya, R., Slupinski, T., Munekata, H., (2002) Phys. Rev. Lett., 88, p. 137202; Ohno, H., (1998) Science, 281, p. 951; Ohno, H., Chiba, D., Matsukura, F., Omlya, T., Abe, E., Dietl, T., Ohno, Y., Ohtanl, K., (2000) Nature (London), 408, p. 944; Koshihara, S., Oiwa, A., Hirasawa, M., Katsumoto, S., Iye, Y., Urano, C., Takagi, H., Munekata, H., (1997) Phys. Rev. Lett., 78, p. 4617; Lee, S., (2003) J. Appl. Phys., 93, p. 8307; Wojtowicz, T., (2003) Appl. Phys. Lett., 83, p. 4220; Wang, K.Y., Campion, R.P., Edmonds, K.W., Sawicki, M., Dietl, T., Foxon, C.T., Gallagher, B.L., cond-mat/0411475Meiklejohn, W.H., (1962) J. Appl. Phys., 33, p. 1328; Nogues, J., Schuller, I.K., (1999) J. Magn. Magn. Mater., 192, p. 203; Liu, X., Sasaki, Y., Furdyna, J.K., (2001) Appl. Phys. Lett., 79, p. 2414; Choi, I.S., Nam, S.H., Lee, H.J., Lee, S., An, S.Y., Lim, W.L., Liu, X., Furdyna, J., (2004) J. Korean Phys. Soc., 45, p. 554; Nagaev, E.L., (1996) Phys. Rev. B, 54, p. 16608; Yuldashev, Sh.U., (2003) Appl. Phys. Lett., 82, p. 1206; Hurd, C.M., (1980) The Hall Effect and Its Applications, pp. 43-51. , edited by C. L.Chien and C. W.Westgate (Plenum, New York; Edmonds, K.W., Wang, K.Y., Neumann, A.C., Foxon, C.T., Gallagher, B.L., Main, P.C., (2002) Appl. Phys. Lett., 81, p. 3010; Wang, K.Y., cond-mat/0211697Baxter, D.V., Ruzmetov, D., Scherschligt, J., Sasaki, Y., Liu, X., Furdyna, J.K., Mielke, C.H., (2002) Phys. Rev. B, 65, p. 212407; Tang, H.X., Kawakami, R.K., Awschalom, D.D., Roukes, M.L., (2003) Phys. Rev. Lett., 90, p. 107201

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Available from: 2012-11-30 Created: 2012-11-22 Last updated: 2017-12-07Bibliographically approved

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