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Stable multidomain structures formed in the process of magnetization reversal in GaMnAs ferromagnetic semiconductor thin films
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2007 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 98, no 4Article in journal (Refereed) Published
Abstract [en]

The process of magnetization reversal in ferromagnetic Ga(1-x)MnxAs epilayers has been systematically investigated using the planar Hall effect (PHE). Interestingly, we have observed a pronounced asymmetry in the PHE hysteresis when the range of the field scan is restricted to fields below the final magnetization transition. The observed behavior indicates that (a)A multidomain structures are formed as M undergoes a reorientation, (b) the domain landscape formed in this way remains stable even after the magnetic field is switched off, and (c) the reorientation of magnetization directions corresponding to the transition points in PHE takes place separately within each domain. © 2007 The American Physical Society.

Place, publisher, year, edition, pages
2007. Vol. 98, no 4
Keyword [en]
Ferromagnetic materials, Hall effect, Hysteresis, Magnetic fields, Magnetization, Multidomain structures, Planar Hall effect (PHE), Reorientation, Thin films
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-105596DOI: 10.1103/PhysRevLett.98.047201ISI: 000243789700060OAI: oai:DiVA.org:kth-105596DiVA: diva2:573519
Note

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Available from: 2012-11-30 Created: 2012-11-22 Last updated: 2017-12-07Bibliographically approved

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