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Tunable quaternary states in ferromagnetic semiconductor GaMnAs single layer for memory devices
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2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 15Article in journal (Refereed) Published
Abstract [en]

The authors show that staggered asymmetric planar Hall resistance (PHR) loops observed in GaMnAs ferromagnetic semiconductor films with biaxial in-plane magnetic anisotropy result in four stable resistance states at zero magnetic field owing to the formation of a stable multidomain structure during magnetization reversal. The values of PHR can be systematically controlled by changing the direction and the scanning range of the applied magnetic field. The possibility of a quaternary memory device based on the observed four PHR states is demonstrated by obtaining consistent results in the writing process using appropriate sequences of magnetic field pulses. © 2007 American Institute of Physics.

Place, publisher, year, edition, pages
2007. Vol. 90, no 15
Keyword [en]
Multidomain structure, Planar Hall resistance (PHR), Quaternary memory devices, Zero magnetic fields, Data storage equipment, Hall effect, Magnetic fields, Magnetic semiconductors, Magnetization, Semiconducting gallium compounds
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-105594DOI: 10.1063/1.2721144ISI: 000245690700063OAI: diva2:573521

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Available from: 2012-11-30 Created: 2012-11-22 Last updated: 2013-05-13Bibliographically approved

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