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Precise investigation of domain pinning energy in GaMnAs using planar hall effect and magnetoresistance measurements
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2007 (English)In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 43, no 6, 3025-3027 p.Article in journal (Refereed) Published
Abstract [en]

The planar Hall effect (PHE) and magnetoresistance (MR) measurements have been carried out on a GaMnAs ferromagnetic semiconductor. The PHE and MR spectra exhibit interesting two-step magnetization switching behavior arising from the magnetic anisotropy properties of the system. By fitting the angle-dependent planar Hall resistance (PHR) data taken at 5 kG with the Stoner-Wohlfarth model, the cubic and uniaxial anisotropy constants were independently obtained. The anisotropy constants lead to the precise determination of easy axis direction, which turns out to be in good agreement with the easy axis determined from the angular plot of the switching field. The domain pinning energies were further obtained by fitting the angle dependence of the switching field, including the effect of uniaxial anisotropy. © 2007 IEEE.

Place, publisher, year, edition, pages
2007. Vol. 43, no 6, 3025-3027 p.
Keyword [en]
(Ga, Mn)As, Magnetic anisotropy, Magnetic semiconductor, Magnetoresistance, Pinning energy, Planar Hall effect, Data acquisition, Ferromagnetic materials, Hall effect, Magnetic semiconductors, Magnetization, Planar Hall effect (PHE), Planar Hall resistance (PHR), Stoner Wohlfarth model, Semiconducting gallium
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-105593DOI: 10.1109/TMAG.2007.894014ISI: 000246706200311OAI: diva2:573522

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Available from: 2012-11-30 Created: 2012-11-22 Last updated: 2013-05-13Bibliographically approved

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