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Thickness dependence of magnetic domain pinning energy in GaMnAs ferromagnetic semiconductor films
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2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, no 7Article in journal (Refereed) Published
Abstract [en]

Magnetotransport measurements were performed on GaMnAs films with four different thicknesses. The process of magnetization reorientation was investigated by planar Hall effect, from which the magnetization switching fields were determined for each film thickness. Domain pinning energies were then obtained for the films by fitting the angular dependence of the switching fields using the model developed by Cowburn [J. Appl. Phys. 78, 7210 (1995)]. The results show a systematic increase of domain pinning energies as the thickness of the film decreases. Such dependence of domain pinning can be understood in terms of the carrier dependence of magnetic anisotropy in GaMnAs films on the concentration of carriers. © 2008 American Institute of Physics.

Place, publisher, year, edition, pages
2008. Vol. 103, no 7
Keyword [en]
Film thickness, Galvanomagnetic effects, Magnetic domains, Magnetic films, Magnetization, Domain pinning energies, Semiconductor films, Semiconducting gallium
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-105590DOI: 10.1063/1.2836789ISI: 000255043200398OAI: diva2:573525

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Available from: 2012-11-30 Created: 2012-11-22 Last updated: 2013-05-13Bibliographically approved

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