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Magneto-transport properties of a GaMnAs-based ferromagnetic semiconductor trilayer structure grown on a ZnMnSe buffer
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2008 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 37, no 6, 912-916 p.Article in journal (Refereed) Published
Abstract [en]

Magneto-transport properties have been investigated in a ferromagnetic GaMnAs/GaAlAs/GaMnAs semiconductor trilayer structure grown on a ZnMnSe buffer layer. The presence of the ZnMnSe buffer leads to the formation of a spin-valve-like structure, which provides the opportunity to investigate spin scattering effects by Hall resistance and magnetoresistance (MR) measurements in the current-in-plane (CIP) configuration. The Curie temperature (T c) and coercivity of the bottom GaMnAs layer are observed to be different from those of the top GaMnAs layer due to the proximity effect between the ferromagnetic GaMnAs and paramagnetic ZnMnSe layers. A two-step behavior is observed in the hysteresis loops of the Hall resistance, indicating that the coercive fields are different in the two GaMnAs layers in the trilayer structure. The magnetoresistance (MR) measured simultaneously with the Hall resistance shows a sudden increase in the field region where the magnetization of the two GaMnAs layers is different. Although the MR ratio was observed to be only 0.04% in our trilayer structure (due to the experimental CIP configuration), the study clearly demonstrates the presence of spin scattering in a trilayer ferromagnetic semiconductor structure grown on a ZnMnSe buffer. © 2008 TMS.

Place, publisher, year, edition, pages
2008. Vol. 37, no 6, 912-916 p.
Keyword [en]
GaMnAs, Proximity effect, TMR, Trilayer, Ferromagnetic semiconductors, Hall resistance, Trilayers, Valve-like structure, Buffer layers, Curie temperature, Ferromagnetic materials, Hall effect, Hysteresis loops, Magnetoresistance, Paramagnetic materials, Semiconductor growth, Semiconducting gallium arsenide
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-105588DOI: 10.1007/s11664-008-0391-xISI: 000255058700017OAI: diva2:573527

References: Wolf, S.A., Awschalom, D.D., Buhrman, R.A., Daughton, J.M., Von Molar, S., Roukes, M.L., Chtchelkamova, A.Y., Treger, D.M., (2001) Science, 294, p. 1488; Ohno, H., Shen, A., Matsukura, F., Oiwa, A., Endo, A., Katsumoto, S., Iye, Y., (1996) Appl. Phys. Lett., 69, p. 363; Koshihara, S., Oiwa, A., Hirasawa, M., Katsumoto, S., Iye, Y., Urano, C., Takagi, H., Munekata, H., (1997) Phys. Rev. Lett., 78, p. 4617; Oiwa, A., Mitsumori, Y., Moriya, R., Slupinski, T., Munekata, H., (2002) Phys. Rev. Lett., 88, p. 137202; Ohno, H., Chiba, D., Matsukura, F., Omlya, T., Abe, E., Dietl, T., Ohno, Y., Ohtanl, K., (2000) Nature (London), 408, p. 944; Chiba, D., Yamanouch, M., Matsukura, F., Ohno, H., (2003) Science, 301, p. 943; Yuldashev, Sh.U., Im, H., Yalishev, V.Sh., Park, C.S., Kang, T.W., Sanghoon, L., Sasaki, Y., Furdyna, J.K., (2003) Appl. Phys. Lett., 82, p. 1206; Lee, S., Chung, S.J., Choi, I.S., Yuldashev, Sh.U., Im, H., Kang, T.W., Lim, W.L., Furdyna, J.K., (2003) J. Appl. Phys., 93, p. 8307; Chiba, D., Akiba, N., Matsukura, F., Ohno, Y., Ohno, H., (2000) Appl. Phys. Lett., 77, p. 1873; Tanaka, M., Higo, Y., (2001) Phys. Rev. Lett., 87, p. 026602; Chiba, D., Sato, Y., Kita, T., Matsukura, F., Ohno, H., (2004) Phys. Rev. Lett., 93, p. 216602; Potashnik, S.J., Ku, K.C., Wang, R.F., Stone, M.B., Samarth, N., Schiffer, P., Chun, S.H., (2003) J. Appl. Phys., 93, p. 6784; Liu, X., Sasaki, Y., Furdyna, J.K., (2001) Appl. Phys. Lett., 79, p. 2414; Choi, I.S., An, S.Y., Chung, S.J., Lee, S., Liu, X., Furdyna, J., (2006) J. Appl. Phys., 99, pp. 08D512; Liu, X., Sasaki, Y., Furdyna, J.K., (2003) Phys. Rev. B, 67, p. 205204; Matsukura, F., Ohno, H., Shen, A., Sugawara, Y., (1998) Phys. Rev. B, 57, p. 2037; Hurd, C.M., Chien, C.L., Westgate, C.W., (1980) The Hall Effect and Its Applications, pp. 43-51. , Plenum New York; Akiba, N., Chiba, D., Nakata, K., Matsukura, F., Ohno, Y., Ohno, H., (2000) J. Appl. Phys., 87, p. 6436

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Available from: 2012-11-30 Created: 2012-11-22 Last updated: 2013-05-13Bibliographically approved

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