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Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect
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2008 (English)In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 147, no 7-8, 309-312 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner-Wohlfarth model. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films.

Place, publisher, year, edition, pages
2008. Vol. 147, no 7-8, 309-312 p.
Keyword [en]
A. Ferromagentism, A. Semiconductor, D. Anisotropy, E. Planar Hall effect, Anisotropy, Crystallography, Cubic boron nitride, Electric currents, Etching, Ferromagnetic materials, Ferromagnetism, Gallium alloys, Galvanomagnetic effects, Gyrators, Hall effect, Magnetic field effects, Magnetic materials, Magnetic properties, Magnetism, Mathematical models, Molecular beam epitaxy, Photoacoustic effect, Angular dependences, chemical etching, Chemical-etching process, Elsevier (CO), Magnetic (CE), Planar Hall effects, Stoner Wohlfarth model (SW), Systematic (CO), Uniaxial anisotropy fields, Magnetic anisotropy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-105587DOI: 10.1016/j.ssc.2008.05.037ISI: 000258563600018OAI: oai:DiVA.org:kth-105587DiVA: diva2:573528
Note

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Available from: 2012-11-30 Created: 2012-11-22 Last updated: 2017-12-07Bibliographically approved

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