Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots
2012 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 27, no 11, 115010- p.Article in journal (Refereed) Published
GaAs p(+)-n(+) junctions with and without a layer of InAs quantum dots (QDs) embedded at the interface are discussed in this article. The current density versus voltage (I-V) characteristics show that the junctions without QDs are weak degenerate due to the Beryllium(Be) atoms diffusion of nominal p(++)-GaAs; the junctions with QDs generate enhanced tunneling current at forward bias, because the QDs layer reduces the Be diffusion and enables a two-step tunneling process. At room temperature, the current density of the sample with QDs is enhanced to 122 A cm(-2) at a forward bias of +0.32 V, which is about 2 orders of magnitude higher than the reference sample without QDs.
Place, publisher, year, edition, pages
2012. Vol. 27, no 11, 115010- p.
Bipolar Cascade Lasers, Grown-Gaas
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-106127DOI: 10.1088/0268-1242/27/11/115010ISI: 000310447200010ScopusID: 2-s2.0-84868026823OAI: oai:DiVA.org:kth-106127DiVA: diva2:573636
QC 201212032012-12-032012-11-292012-12-03Bibliographically approved