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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots
KTH, School of Biotechnology (BIO), Theoretical Chemistry and Biology.
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2012 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 27, no 11, 115010- p.Article in journal (Refereed) Published
Abstract [en]

GaAs p(+)-n(+) junctions with and without a layer of InAs quantum dots (QDs) embedded at the interface are discussed in this article. The current density versus voltage (I-V) characteristics show that the junctions without QDs are weak degenerate due to the Beryllium(Be) atoms diffusion of nominal p(++)-GaAs; the junctions with QDs generate enhanced tunneling current at forward bias, because the QDs layer reduces the Be diffusion and enables a two-step tunneling process. At room temperature, the current density of the sample with QDs is enhanced to 122 A cm(-2) at a forward bias of +0.32 V, which is about 2 orders of magnitude higher than the reference sample without QDs.

Place, publisher, year, edition, pages
2012. Vol. 27, no 11, 115010- p.
Keyword [en]
Bipolar Cascade Lasers, Grown-Gaas
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-106127DOI: 10.1088/0268-1242/27/11/115010ISI: 000310447200010ScopusID: 2-s2.0-84868026823OAI: diva2:573636

QC 20121203

Available from: 2012-12-03 Created: 2012-11-29 Last updated: 2012-12-03Bibliographically approved

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Shang, Xiangjun
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