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The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As
Department of Physics, Korea University.
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2009 (English)In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 149, no 41-42, 1739-1742 p.Article in journal (Refereed) Published
Abstract [en]

Planar Hall effect (PHE) measurements are used to investigate magnetic anisotropy in two (Ga, Mn)As samples which differ by the hole concentration, but are otherwise identical. The difference in the hole density is controlled via modulation doping by Be. Angular dependence of PHE measured at 13 K reveals that the uniaxial easy axis in the sample with a lower hole concentration lies along the [110] direction, and along [over(1, ̄) 10] in the sample with higher doping. This difference in the orientation of uniaxial easy axes in the two samples demonstrates that the magnetization of GaMnAs can be manipulated just by varying the carrier density.

Place, publisher, year, edition, pages
2009. Vol. 149, no 41-42, 1739-1742 p.
Keyword [en]
A. Ferromagnetism, A. Semiconductor, D. Anisotropy, E. Planar Hall effect, [110] direction, Angular dependence, Carrier density, Easy axis, Ferromagnetic semiconductor, Hole densities, Modulation doping, Planar Hall effect, Electric currents, Ferromagnetism, Gyrators, Hall effect, Hole concentration, Magnetic anisotropy, Manganese, Manganese compounds, Magnetic field effects
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-105581DOI: 10.1016/j.ssc.2009.07.024ISI: 000270690000003OAI: oai:DiVA.org:kth-105581DiVA: diva2:574461
Note

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Available from: 2012-12-05 Created: 2012-11-22 Last updated: 2017-12-07Bibliographically approved

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