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Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices
Department of Physics, Korea University.
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2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 95, no 20Article in journal (Refereed) Published
Abstract [en]

We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation. © 2009 American Institute of Physics.

Place, publisher, year, edition, pages
2009. Vol. 95, no 20
Keyword [en]
Anomalous Hall effects, Crystallographic directions, Fe films, Field pulse, GaAs, Hall resistance, Magnetic state, Memory device, Practical implementation, Room temperature, Single layer, Vicinal surface, Hall effect, Metallic films, Magnetic field effects
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-105580DOI: 10.1063/1.3266826ISI: 000272052200041OAI: diva2:574462

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Available from: 2012-12-05 Created: 2012-11-22 Last updated: 2013-05-13Bibliographically approved

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