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Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film
Department of Physics, Korea University.
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2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 9Article in journal (Refereed) Published
Abstract [en]

The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalous Hall resistance for in-plane and out-of plane components of the Hall signal, respectively. The magnetic anisotropy fields obtained by this process were used to construct a three-dimensional magnetic free energy diagram, which clearly shows that the out-of-plane characteristics of magnetic anisotropy become more pronounced as we approach the bottom part of the film. © 2010 American Institute of Physics.

Place, publisher, year, edition, pages
2010. Vol. 96, no 9
Keyword [en]
Angular dependence, Ferromagnetic semiconductor, Growth directions, Hall effect measurement, Hall resistance, Hall signal, In-plane, Magnetic anisotropy field, Magnetic free energy, Out-of plane, Vertical gradients, Hall effect, Magnetic field effects, Magnetic materials, Magnetism, Manganese, Manganese compounds, Semiconductor growth, Single crystals, Magnetic anisotropy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-105579DOI: 10.1063/1.3339301ISI: 000275246200027OAI: oai:DiVA.org:kth-105579DiVA: diva2:574463
Note

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Available from: 2012-12-05 Created: 2012-11-22 Last updated: 2017-12-07Bibliographically approved

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