Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Magnetization reorientation in Gax Mn1-x As films: Planar Hall effect measurements
Department of Physics, Korea University.
2010 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 81, no 15Article in journal (Refereed) Published
Abstract [en]

The process of magnetization reorientation in a ferromagnetic semiconductor GaMnAs films was investigated using planar Hall effect measurements. In addition to the well-known two-step switching behavior that occurs during this process, we have observed two additional distinct features in field scan data of the planar Hall resistance (PHR). First, the region of the external field required to begin and complete the reorientation of magnetization from one easy axis to another strongly depends on the direction of the applied field. And second, the maximum amplitude of PHR is significantly reduced during magnetization reversal when the applied field is oriented near one of the easy axes of the GaMnAs film. We provide an explanation of these phenomena using the magnetic field dependence of the free-energy density and assuming the coexistence of multiple domains with three different directions of magnetization in the sample. © 2010 The American Physical Society.

Place, publisher, year, edition, pages
2010. Vol. 81, no 15
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-105578DOI: 10.1103/PhysRevB.81.155209ISI: 000277210500064OAI: oai:DiVA.org:kth-105578DiVA: diva2:574466
Note

References: Wolf, S.A., Awschalom, D.D., Buhrman, R.A., Daughton, J.M., Von Molnar, S., Roukes, M.L., Chtchelkanova, A.Y., Treger, D.M., Spintronics: A spin-based electronics vision for the future (2001) Science, 294 (5546), pp. 1488-1495. , DOI 10.1126/science.1065389; Lee, S., Chung, J.H., Liu, X.Y., Furdyna, J.K., Kirby, B.J., (2009) Mater. Today, 12, p. 14. , 10.1016/S1369-7021(09)70109-9; Schott, G.M., Faschinger, W., Molenkamp, L.W., (2001) Appl. Phys. Lett., 79, p. 1807. , 10.1063/1.1403238; Chung, J.H., Chung, S.J., Lee, S., Kirby, B.J., Borchers, J.A., Cho, Y.J., Liu, X., Furdyna, J.K., (2008) Phys. Rev. Lett., 101, p. 237202. , 10.1103/PhysRevLett.101.237202; Welp, U., Vlasko-Vlasov, V.K., Liu, X., Furdyna, J.K., Wojtowicz, T., (2003) Phys. Rev. Lett., 90, p. 167206. , 10.1103/PhysRevLett.90.167206; Lang, R., Winter, A., Pascher, H., Krenn, H., Liu, X., Furdyna, J.K., Polar Kerr effect studies of Ga1-x Mnx As epitaxial films (2005) Physical Review B - Condensed Matter and Materials Physics, 72 (2), p. 024430. , http://oai.aps.org/oai/?verb=ListRecords&metadataPrefix= oai_apsmeta_2&set=journal:PRB:72, DOI 10.1103/PhysRevB.72.024430; Titova, L.V., Kutrowski, M., Liu, X., Chakarvorty, R., Lim, W.L., Wojtowicz, T., Furdyna, J.K., Dobrowolska, M., Competition between cubic and uniaxial anisotropy in Ga1-xMnxAs in the low-Mn-concentration limit (2005) Physical Review B - Condensed Matter and Materials Physics, 72 (16), pp. 1-7. , http://oai.aps.org/oai/?verb=ListRecords&metadataPrefix= oai_apsmeta_2&set=journal:PRB:72, DOI 10.1103/PhysRevB.72.165205, 165205; Ohno, H., Shen, A., Matsukura, F., Oiwa, A., Endo, A., Katsumoto, S., Iye, Y., (1996) Appl. Phys. Lett., 69, p. 363. , 10.1063/1.118061; Sawicki, M., Matsukura, F., Idziaszek, A., Dietl, T., Schott, G.M., Ruester, C., Gould, C., Molenkamp, L.W., Temperature dependent magnetic anisotropy in (Ga,Mn)As layers (2004) Physical Review B - Condensed Matter and Materials Physics, 70 (24), pp. 1-6. , DOI 10.1103/PhysRevB.70.245325, 245325; Sawicki, M., Wang, K.-Y., Edmonds, K.W., Campion, R.P., Staddon, C.R., Farley, N.R.S., Foxon, C.T., Gallagher, B.L., In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films (2005) Physical Review B - Condensed Matter and Materials Physics, 71 (12), pp. 1-4. , http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype= pdf&id=PRBMDO000071000012121302000001&idtype=cvips, DOI 10.1103/PhysRevB.71.121302, 121302; Matsukura, F., Ohno, H., Shen, A., Sugawara, Y., (1998) Phys. Rev. B, 57, p. 2037. , 10.1103/PhysRevB.57.R2037; Edmonds, K.W., Wang, K.Y., Campion, R.P., Neumann, A.C., Foxon, C.T., Gallagher, B.L., Main, P.C., Hall effect and hole densities in Ga1-xMnxAs (2002) Applied Physics Letters, 81 (16), p. 3010. , DOI 10.1063/1.1512822; Yuldashev, Sh.U., Jeon, H.C., Im, H.S., Kang, T.W., Lee, S.H., Furdyna, J.K., Anomalous Hall effect in insulating Ga1-xMnxAs (2004) Physical Review B - Condensed Matter and Materials Physics, 70 (19), pp. 1-4. , DOI 10.1103/PhysRevB.70.193203, 193203; Van Esch, A., Van Bockstal, L., De Boeck, J., Verbanck, G., Van Steenbergen, A.S., Wellmann, P.J., Grietens, B., Borghs, G., (1997) Phys. Rev. B, 56, p. 13103. , 10.1103/PhysRevB.56.13103; Shin, D.Y., Chung, S.J., Lee, S., Liu, X., Furdyna, J.K., (2007) Phys. Rev. B, 76, p. 035327. , 10.1103/PhysRevB.76.035327; Tang, H.X., Kawakami, R.K., Awschalom, D.D., Roukes, M.L., (2003) Phys. Rev. Lett., 90, p. 107201. , 10.1103/PhysRevLett.90.107201; Wang, K.Y., Edmonds, K.W., Campion, R.P., Zhao, L.X., Foxon, C.T., Gallagher, B.L., Anisotropic magnetoresistance and magnetic anisotropy in high-quality (Ga,Mn)As films (2005) Physical Review B - Condensed Matter and Materials Physics, 72 (8), pp. 1-7. , http://oai.aps.org/oai/?verb=ListRecords&metadataPrefix= oai_apsmeta_2&set=journal:PRB:72, DOI 10.1103/PhysRevB.72.085201, 085201; Nazmul, A.M., Lin, H.T., Tran, S.N., Ohya, S., Tanaka, M., (2008) Phys. Rev. B, 77, p. 155203. , 10.1103/PhysRevB.77.155203; Ge, Z., Lim, W.L., Shen, S., Zhou, Y.Y., Liu, X., Furdyna, J.K., Dobrowolska, M., (2007) Phys. Rev. B, 75, p. 014407. , 10.1103/PhysRevB.75.014407; Yuldashev, S.U., Im, H., Yalishev, V.S., Park, C.S., Kang, T.W., Lee, S., Sasaki, Y., Furdyna, J.K., (2003) Appl. Phys. Lett., 82, p. 1206. , 10.1063/1.1554482; Novak, V., Olejník, K., Wunderlich, J., Cukr, M., Výborný, K., Rushforth, A.W., Edmonds, K.W., Jungwirth, T., (2008) Phys. Rev. Lett., 101, p. 077201. , 10.1103/PhysRevLett.101.077201; Stoner, E.C., Wohlfarth, E.P., (1948) Philos. Trans. R. Soc. London, Ser. A, 240, p. 599. , 10.1098/rsta.1948.0007; Shin, D.Y., Chung, S.J., Lee, S., Liu, X., Furdyna, J.K., Stable multidomain structures formed in the process of magnetization reversal in GaMnAs ferromagnetic semiconductor thin films (2007) Physical Review Letters, 98 (4), p. 047201. , http://oai.aps.org/oai?verb=GetRecord&Identifier=oai:aps.org: PhysRevLett.98.047201&metadataPrefix=oai_apsmeta_2, DOI 10.1103/PhysRevLett.98.047201; Shin, D.Y., Chung, S.J., Lee, S., Liu, X., Furdyna, J.K., Precise investigation of domain pinning energy in GaMnAs using planar hall effect and magnetoresistance measurements (2007) IEEE Transactions on Magnetics, 43 (6), pp. 3025-3027. , DOI 10.1109/TMAG.2007.894014; Son, H., Chung, S.-J., Yea, S.-Y., Lee, S., Liu, X., Furdyna, J.K., Quantitative investigation of the magnetic anisotropy in GaMnAs film by using Hall measurement (2008) Journal of Applied Physics, 103 (7), pp. 07F313. , DOI 10.1063/1.2834448; Cowburn, R.P., Gray, S.J., Ferre, J., Bland, J.A.C., Miltat, J., (1995) J. Appl. Phys., 78, p. 7210. , 10.1063/1.360431; Yea, S.-Y., Chung, S.-J., Son, H., Lee, S., Liu, X., Furdyna, J.K., Thickness dependence of magnetic domain pinning energy in GaMnAs ferromagnetic semiconductor films (2008) Journal of Applied Physics, 103 (7), pp. 07D118. , DOI 10.1063/1.2836789; Hamaya, K., Taniyama, T., Kitamoto, Y., Moriya, R., Munekata, H., (2003) J. Appl. Phys., 94, p. 7657. , 10.1063/1.1629134; Dourlat, A., Gourdon, C., Jeudy, V., Testelin, C., Khazen, K., Cantin, J.L., Von Bardeleben, H.J., Lemaitre, A., Expansion and collapse of domains with reverse magnetization in (Ga,Mn)as epilayers with perpendicular magnetic easy axis (2007) IEEE Transactions on Magnetics, 43 (6), pp. 3022-3024. , DOI 10.1109/TMAG.2007.893322; Wang, K.Y., Rushforth, A.W., Grant, V.A., Campion, R.P., Edmonds, K.W., Staddon, C.R., Foxon, C.T., Williams, D.A., Domain imaging and domain wall propagation in (Ga, Mn)As thin films with tensile strain (2007) Journal of Applied Physics, 101 (10), p. 106101. , DOI 10.1063/1.2732406; Lee, S., Shin, D.Y., Chung, S.J., Liu, X., Furdyna, J.K., Tunable quaternary states in ferromagnetic semiconductor GaMnAs single layer for memory devices (2007) Applied Physics Letters, 90 (15), p. 152113. , DOI 10.1063/1.2721144; Chung, S.J., Shin, D.Y., Son, H., Lee, S., Liu, X., Furdyna, J.K., Time stability of multi-domain states formed in the magnetization reversal process of GaMnAs film (2007) Solid State Communications, 143 (4-5), pp. 232-235. , DOI 10.1016/j.ssc.2007.05.022, PII S0038109807003870; Kim, J., Shin, D.Y., Lee, S., Liu, X., Furdyna, J.K., (2008) Phys. Rev. B, 78, p. 075309. , 10.1103/PhysRevB.78.075309

QC 20130513

Available from: 2012-12-05 Created: 2012-11-22 Last updated: 2017-12-07Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Chung, S.
In the same journal
Physical Review B. Condensed Matter and Materials Physics
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 56 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf