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Asymmetry in the reorientation process of magnetization for crossing the [1 1- 0] and the [110] directions in Ga1-x Mnx As epilayers
Department of Physics, Korea University.
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2010 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 107, no 9Article in journal (Refereed) Published
Abstract [en]

The magnetization reversal processes of ferromagnetic Ga 1-xMnx As films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 1- 0] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga1-xMnx As film. © 2010 American Institute of Physics.

Place, publisher, year, edition, pages
2010. Vol. 107, no 9
Keyword [en]
[110] direction, Angle dependence, Asymmetric behaviors, Domain pinning, Hall resistance, Magnetic anisotropy field, Magnetization reorientation, Magnetization reversal process, Mn concentrations, Pinning field, Planar Hall effect, Reorientation process, Gallium, Hall effect, Magnetic anisotropy, Magnetic field effects, Manganese, Manganese compounds, Magnetization reversal
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-105577DOI: 10.1063/1.3352977ISI: 000277834300233OAI: diva2:574467

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Available from: 2012-12-05 Created: 2012-11-22 Last updated: 2013-05-13Bibliographically approved

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