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Present and Future Applications of Silicon Carbide Devices and Circuits
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
2012 (English)In: Proceedings of the Custom Integrated Circuits Conference 2012, IEEE , 2012, 6330619- p.Conference paper, Published paper (Refereed)
Abstract [en]

Silicon Carbide (SiC) is a wide bandgap semiconductor now reaching maturity. Discrete high-voltage SiC devices are commercially available from several suppliers for low-loss power conversion. Future applications may include integrated circuits for high-temperature and radiation-hard applications. This paper introduces SiC material properties, processing, devices, and circuits.

Place, publisher, year, edition, pages
IEEE , 2012. 6330619- p.
Series
IEEE Custom Integrated Circuits Conference. Proceedings, ISSN 0886-5930
Keyword [en]
Silicon carbide, high voltage, high temperature
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-107055DOI: 10.1109/CICC.2012.6330619ISI: 000310365600051Scopus ID: 2-s2.0-84869392136ISBN: 978-1-4673-1556-2 (print)OAI: oai:DiVA.org:kth-107055DiVA: diva2:574592
Conference
34th Annual Custom Integrated Circuits Conference, CICC 2012; San Jose, CA; United States; 9 September 2012 through 12 September 2012
Funder
StandUpSwedish Foundation for Strategic Research
Note

QC 20150707

Available from: 2012-12-06 Created: 2012-12-06 Last updated: 2015-07-07Bibliographically approved

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Zetterling, Carl-Mikael

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