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Bulk PPKTP by crystal growth from high temperature solution
KTH, School of Engineering Sciences (SCI), Applied Physics, Laser Physics.ORCID iD: 0000-0001-7688-1367
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2012 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 360, 52-55 p.Article in journal (Refereed) Published
Abstract [en]

Periodically-poled ferroelectric crystals show unprecedented efficiency and properties otherwise impossible to obtain. Unfortunately, the sample thickness obtainable today limits their use to low and moderate power application. With the aim of increasing the size of periodically domain-structured crystals with a controlled and regular grating period, we proposed an epitaxial growth process using seeds made of thin plates domain engineered by electric field poling. We demonstrated this process with the ferroelectric crystal KTiOPO4 (KTP) which is one of the most promising candidate materials for that purpose. The poling step requires a sample exhibiting (001) and (00 (1) over bar) faces, so that the growth step has to be performed onto these faces. This constraint is a difficulty to circumvent as these faces are not present in the standard equilibrium morphology. It is then necessary to find the growth conditions enabling to work below the roughening temperature of these faces. By using a high temperature solution method, the so-called "flux method", and by choosing an appropriate chemical composition of the flux solution, we obtained periodically domain-structured KTP layers with thicknesses up to 800 mu m and regular periodicity onto (001) and (00 (1) over bar) faces of the initial PPKTP seeds.

Place, publisher, year, edition, pages
2012. Vol. 360, 52-55 p.
Keyword [en]
Growth from high temperature solutions, Liquid phase epitaxy, Ferroelectric materials, Nonlinear optic materials
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Identifiers
URN: urn:nbn:se:kth:diva-107607DOI: 10.1016/j.jcrysgro.2011.11.081ISI: 000310942500011Scopus ID: 2-s2.0-84867505424OAI: oai:DiVA.org:kth-107607DiVA: diva2:577740
Conference
5th International Workshop on Crystal Growth Technology (IWCGT), JUN 26-30, 2011, Berlin, Germany
Note

QC 20121217

Available from: 2012-12-17 Created: 2012-12-14 Last updated: 2017-12-06Bibliographically approved

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Laurell, FredrikCanalias, CarlotaPasiskevicius, Valdas

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