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Simulation of Avalanche breakthroughin Si and SiC
KTH, School of Information and Communication Technology (ICT).
2012 (English)Independent thesis Basic level (degree of Bachelor), 10 credits / 15 HE creditsStudent thesis
Abstract [en]

This paper describes a Monte Carlo simulation of avalanche breakthrough in Si and SiC, which is intended as a teaching aid in introductory courses on semiconductor devices. The model used approximates the charge carriers as hard balls bouncing o each other and transferring kinetic energy between themselves, with ionizations being recorded when EKin > Eg. The simulated results are close to their expected values for Si, and signicantly higher than expected for SiC. It is suggested that this indicates the existence of an hitherto unknown to the author material parameter in SiC that would suppress the carrier velocities, since the bandgap energy itself is too low to counteract the high critical eld that has been measured in SiC.

Abstract [sv]

Denna uppsats beskriver en Monte Carlo-simulering av avalanchegenombrott i kisel och kiselkarbid, med tanked att denna ska användas som ett hjälpmedel i undervisningen i introduktionskurser i halvledarkomponenter. Modellen som används approximerar laddningsbärarna som hårda klot som studsar på varandra och på så sätt överför kinetisk energi sinsemellan. Jonisationer registreras vid kollisioner där EKin > Eg. De simulerade resultaten stämmer väl överens med verkligheten för kisel, men är bedydligt högre än väntat för kiselkarbid. Det föreslås att detta pekar på en för författaren okänd materialparameter som sänker elektronhastigheten i kiselkarbid, då bandgapsenergin i sig är för låg för att förklara det höga kritiska fält som uppmätts i kiselkarbid.

Place, publisher, year, edition, pages
2012. , 42 p.
Series
Trita-ICT-EX, 2012:182
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-107724OAI: oai:DiVA.org:kth-107724DiVA: diva2:577757
Educational program
Master of Science in Engineering - Microelectronics
Uppsok
Technology
Examiners
Available from: 2012-12-17 Created: 2012-12-17 Last updated: 2012-12-17Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
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  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
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