1.22 µm GaInNAs saturable absorber mirrors with tailored recovery time
2010 (English)In: Emerging trends and novel materials in photonics: International Commission for Optics topical meeting, American Institute of Physics (AIP), 2010, 200-203 p.Conference paper (Refereed)
The effect of in-situ N-ion irradiation on the recombination dynamics of GaInNAs/GaAs semiconductor saturable absorber mirrors has been studied. The samples were fabricated by molecular beam epitaxy using a radio frequency plasma source for nitrogen incorporation in the absorber layers as well as for the irradiation. The recombination dynamics of irradiated samples were studied by pump-probe measurements. The recombination time of the absorbers could be reduced by increasing the irradiation time. The effect of the reduced recombination time on the pulse dynamics of a mode-locked laser setup was studied with a Bi-doped fibre laser. The pulse quality was found to improve with increased irradiation time and reduced recombination time, demonstrating the potential of the in-situ irradiation method for device applications.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2010. 200-203 p.
, AIP Conference Proceedings, ISSN 0094-243X ; 1288
semiconductor saturable absorber mirrors, GaInNAs, mode locking, fibre lasers
Atom and Molecular Physics and Optics
IdentifiersURN: urn:nbn:se:kth:diva-107878DOI: 10.1063/1.3521361ISI: 000287170800045ScopusID: 2-s2.0-78651103901ISBN: 978-0-7354-0843-2OAI: oai:DiVA.org:kth-107878DiVA: diva2:578355
International Commission for Optics (ICO), Topical Meeting on "Emerging Trends and Novel Materials in Photonics", ICO-Photonics-Delphi2009; Delphi; Greece; 7 October 2009 through 9 October 2009
QC 201305282012-12-182012-12-182014-09-01Bibliographically approved