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RF Performance Projections of Graphene FETs vs. Silicon MOSFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-3802-7834
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2012 (English)In: ECS Transactions, ISSN 1938-5862, E-ISSN 1938-6737, Vol. 1, no 5, Q39-Q41 p.Article in journal (Refereed) Published
Abstract [en]

A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of speed despite their higher mobility. This is counterintuitive, but can be explained by the effect of a strongly nonlinear voltage-dependent gate capacitance. GFETs achieve their maximum performance only for narrow ranges of V-DS and I-DS, which must be carefully considered for circuit design. For our parameter set, GFETs require at least mu = 3000 cm(2) V-1 s(-1) to achieve the same performance as 65 nm silicon MOSFETs.

Place, publisher, year, edition, pages
Electrochemical Society, 2012. Vol. 1, no 5, Q39-Q41 p.
Keyword [en]
graphene FET, CMOS, RF
National Category
Engineering and Technology
Research subject
SRA - ICT
Identifiers
URN: urn:nbn:se:kth:diva-109266DOI: 10.1149/2.001205sslISI: 000318341000010Scopus ID: 2-s2.0-84870611145OAI: oai:DiVA.org:kth-109266DiVA: diva2:580702
Funder
EU, European Research Council, 228229, 307311Swedish Research CouncilStandUp
Note

QC 20130115

Available from: 2013-01-15 Created: 2012-12-25 Last updated: 2017-06-13Bibliographically approved

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Rusu, Ana

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