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Band-edge density-of-states and carrier concentrations in intrinsic and p-type CuIn1-xGaxSe2
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.ORCID iD: 0000-0002-9050-5445
2012 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 112, no 10, 103708- p.Article in journal (Refereed) Published
Abstract [en]

The electronic structures of chalcopyrite CuIn1-xGaxSe2 have recently been reported to have strongly anisotropic and non-parabolic valence bands (VBs) even close to the Gamma-point VB maximum. Also, the lowest conduction band (CB) is non-parabolic for energies 50-100 meV above the CB minimum. The details in the band-edge dispersion govern the material's electrical properties. In this study, we, therefore, analyze the electronic structure of the three uppermost VBs and the lowest CB in CuIn1-xGaxSe2 (x = 0, 0.5, and 1). The parameterized band dispersions are explored, and the density-of-states (DOS) as well as the constant energy surfaces are calculated and analyzed. The carrier concentration and the Fermi energy E-F in the intrinsic alloys as functions of the temperature is determined from the DOS. The carrier concentration in p-type materials is modeled by assuming the presence of Cu vacancies as the acceptor type defect. We demonstrate that the non-parabolicity of the energy bands strongly affects the total DOS. Therefore, it is important to take into account full band dispersion of the VBs and CB when analyzing the free carrier concentration, like for instance, in studies of electronic transport and/or measurements that involve strong excitation conditions.

Place, publisher, year, edition, pages
2012. Vol. 112, no 10, 103708- p.
Keyword [en]
N-Type, Electronic-Properties, Solar-Cells, Thin-Films, Cuinse2, Cugase2, Transport, Germanium, Crystals, Silicon
National Category
Other Physics Topics
URN: urn:nbn:se:kth:diva-109640DOI: 10.1063/1.4767120ISI: 000311969800064ScopusID: 2-s2.0-84870697429OAI: diva2:585029
Swedish Research Council

QC 20130109

Available from: 2013-01-09 Created: 2013-01-08 Last updated: 2015-03-05Bibliographically approved
In thesis
1. Exploring the Electronic and Optical Properties of Cu(In,Ga) Se2
Open this publication in new window or tab >>Exploring the Electronic and Optical Properties of Cu(In,Ga) Se2
2015 (English)Licentiate thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2015. vii, 63 p.
National Category
Materials Engineering
urn:nbn:se:kth:diva-160949 (URN)978-91-7595-453-0 (ISBN)
2015-03-06, Sal N111, Brinellvägen 23, KTH, Stockholm, 11:00 (English)

QC 20150305

Available from: 2015-03-05 Created: 2015-03-05 Last updated: 2015-03-09Bibliographically approved

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