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Graphene for microelectronics: Can it make a difference?
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2012 (English)In: Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European, IEEE conference proceedings, 2012, 25-27 p.Conference paper, Published paper (Refereed)
Abstract [en]

Benchmarking figures for graphene show remarkable properties like ballistic conductance over several hundred nanometers or charge carrier mobilities of several 100.000 cm2/Vs [1, 2]. When graphene is integrated and processed, however, defects in the graphene and its dielectric environment dominate device performance [3, 4]. Furthermore, the lack of a band gap limits the applicability of graphene field effect transistors (GFETs) for logic applications. Yet, there are many options for graphene to make a difference in the future of microelectronics, many of which can be attributed to the More than Moore domain defined in the ITRS. These will be discussed in this talk.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2012. 25-27 p.
Series
European Solid-State Device Research Conference, ISSN 1930-8876
Keyword [en]
Ballistic conductance, Device performance, Logic applications
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-114320DOI: 10.1109/ESSDERC.2012.6343326Scopus ID: 2-s2.0-84870590264ISBN: 978-146731707-8 (print)OAI: oai:DiVA.org:kth-114320DiVA: diva2:588324
Conference
42nd European Solid-State Device Research Conference, ESSDERC 2012, 17 September 2012 through 21 September 2012, Bordeaux
Note

QC 20130115

Available from: 2013-01-15 Created: 2013-01-15 Last updated: 2016-02-15Bibliographically approved

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