Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices
2012 (English)In: Beilstein Journal of Nanotechnology, ISSN 2190-4286, Vol. 3, 884-892 p.Article in journal (Refereed) Published
Patterning of materials at sub-10 nm dimensions is at the forefront of nanotechnology and employs techniques of various complexity, efficiency, areal scale, and cost. Colloid-based patterning is known to be capable of producing individual sub-10 nm objects. However, ordered, large-area nano-arrays, fully integrated into photonic or electronic devices have remained a challenging task. In this work, we extend the practice of colloidal lithography to producing large-area sub-10 nm point-contact arrays and demonstrate their circuit integration into spin-photo-electronic devices. The reported nanofabrication method should have broad application areas in nanotechnology as it allows ballistic-injection devices, even for metallic materials with relatively short characteristic relaxation lengths.
Place, publisher, year, edition, pages
2012. Vol. 3, 884-892 p.
magnetic point contact arrays, spin laser, sub-10 nm colloidal lithography
IdentifiersURN: urn:nbn:se:kth:diva-116426DOI: 10.3762/bjnano.3.98ISI: 000312704900001OAI: oai:DiVA.org:kth-116426DiVA: diva2:589939
FunderEU, FP7, Seventh Framework Programme
QC 201301212013-01-212013-01-182013-01-21Bibliographically approved