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Investigation of GaN-HEMT Based Switches for Hybrid Switching Amplifier Supply-Modulators
Ferdinand-Braun Institut, Leibniz-Institut für Höchstfrequenztechnik.
Ferdinand-Braun Institut, Leibniz-Institut für Höchstfrequenztechnik.
Ferdinand-Braun Institut, Leibniz-Institut für Höchstfrequenztechnik.
KTH, School of Electrical Engineering (EES), Signal Processing. KTH, School of Electrical Engineering (EES), Centres, ACCESS Linnaeus Centre.
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2012 (English)In: Frequenz, ISSN 0016-1136, E-ISSN 2191-6349, Vol. 66, no 11-12, 339-345 p.Article in journal (Refereed) Published
Abstract [en]

An investigation of GaN-HEMT based switching stages in hybrid switching amplifiers (HSA) for wide-bandwidth supply modulation of RF power amplifiers is presented. The HSA is designed for maximum 15 V supply voltage, 1 A supply current and 10 MHz bandwidth. GaN-HEMT switch designs with alternative gate drive circuitry are investigated with regard to power, efficiency and linearity under different load conditions using simulations and measurements of the fabricated circuits. The full HSA showed an efficiency of 49.7% for a WCDMA envelope. A modified switching stage with improved gate-drive circuitry shows 85% efficiency in a 15 V buck-converter test-circuit for a 10 V conversion at 1 MHz over a 15 Ω load.

Place, publisher, year, edition, pages
2012. Vol. 66, no 11-12, 339-345 p.
Keyword [en]
EER; envelope tracking; hybrid switching amplifiers; power amplifiers supply modulation
National Category
Signal Processing Telecommunications
Identifiers
URN: urn:nbn:se:kth:diva-116604DOI: 10.1515/freq-2012-0100ISI: 000313934700004Scopus ID: 2-s2.0-84876539513OAI: oai:DiVA.org:kth-116604DiVA: diva2:598742
Note

QC 20130212

Available from: 2013-01-22 Created: 2013-01-22 Last updated: 2017-12-06Bibliographically approved

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